| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2-input OR GATE • High speed - tpd = 15ns (Typ.) at VCC = 5V • Low Power Dissipation - ICC = 1µA (Max.) at Ta = 25°C • Compatible with TTL outputs - VIL = 0.8V (Max.), VIH = 2.0V (Min.) • Output Drive Capability - 5 LSTTL Loads • Symmetrical Output Impedance - |IOH| |
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Toshiba Semiconductor |
2-input OR GATE • High speed - tpd = 15ns (Typ.) at VCC = 5V • Low Power Dissipation - ICC = 1µA (Max.) at Ta = 25°C • Compatible with TTL outputs - VIL = 0.8V (Max.), VIH = 2.0V (Min.) • Output Drive Capability - 5 LSTTL Loads • Symmetrical Output Impedance - |IOH| |
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Toshiba |
Silicon N-Channel IEGT (1) High reliability due to hermetic sealing structure. (2) Double side cooling type. 3. Packaging and Internal Circuit ST3000GXH35A ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2024-02 2024-03-22 |
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