| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK4115 EDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the |
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Toshiba Semiconductor |
2SK4107 ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba |
Field Effect Transistor Silicon N Channel MOS Type rature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute ma |
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Toshiba Semiconductor |
2SK4108 ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba |
2SK4110 t/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings |
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Toshiba |
Field Effect Transistor erature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m |
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Toshiba |
2SK4106 /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
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Toshiba Semiconductor |
N-Channel MOSFET EDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the |
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Toshiba |
2SK4111 tion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are with |
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Toshiba |
(TMP87Cx41) CMOS 8-Bit Microcontroller |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET . Low Drain-Source ON Resistance : RdS(ON) = 0.1Q (Typ.) . High Forward Transfer Admittance : lYf s l=4S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V IDS S= 1mA (Max.) @ VDS =60V . Enhancement-Mode : V t h=l • 5 ~ 3. 5V @ lD=lmA |
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Toshiba |
N-channel MOSFET tion of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are with |
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Toshiba |
Silicon N-Channel MOSFET rature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute ma |
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Toshiba Semiconductor |
Column and Row Driver LSI · · · · · · LCD drive outputs Display RAM Gray scales Word length Display duty cycle Display modes : 128 rows (common) × 128 columns (segment) + 16 icons : 128 × 128 × 2 = 32,768 bits, 2-port RAM : 4 gray-scale levels (palette function) : 8-bit/word |
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Toshiba Semiconductor |
N-Channel MOSFET ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba |
Field Effect Transistor erature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m |
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Toshiba |
N-Channel Transistor .High Breakdown Voltage : V(BR)DSS= 400V . High Forward Transfer Admittance : lYf s ]=1.2S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode IDS S= 1mA (Max.) @ VD s=400V : Vth= l-5 ~ 3.5V @ In=lmA INDUSTRIAL APPLI |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET ng continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op |
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Toshiba |
N-Channel MOSFET /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
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Toshiba Semiconductor |
MOSFET itions (i.e. Weight: 7.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“ |
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