| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
N-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Toshiba Semiconductor |
2SK3868 (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/volta |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
2SK3869 usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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Toshiba |
2SK3880 bient Symbol Rth (ch-c) Rth (ch-a) Max 1.56 41.6 Unit 1 °C/W °C/W 3 Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A Note 3: Rep |
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Toshiba |
N-Channel MOSFET nuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating |
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Toshiba Semiconductor |
2SK389 |
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Toshiba Semiconductor |
2SK3842 tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba Semiconductor |
N-Channel MOSFET tinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operatin |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Dra |
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Toshiba |
N-Channel Transistor . Low Drain-Source ON Resistance : RdS(ON) = 0- 12 ^ ( tYP • . High Forward Transfer Admittance : 1 Yf s | =6S (Typ.) . Low Leakage Current : lGsS =±100nA (Max « ) @ VgS=±20V lDSS=lmA(Max.) @ VD s=150V . Enhancement-Mode : Vth=1.5~3.5V @ lD=lmA |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
TMP87CK38N 4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataShe |
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Toshiba Semiconductor |
N-Channel MOSFET mperature range JEDEC JEITA TOSHIBA SC-64 2-7B5B Weight: 0.36 g (typ.) 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 1.1 ± 0.2 V 2.3 2.3 0.6 MAX. ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the |
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Toshiba |
N-Channel Transistor . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max.) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA MAXIMUM RATI |
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Toshiba |
N-Channel Transistor . High Breakdown Voltage : V(br)dss = 400V . High Forward Transfer Admittance : ] Yf s ) =5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VD s=400V : V tn=1.5~3.5V @ lD=lmA INDUSTRIAL APPLICAT |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba Semiconductor |
CMOS 8-BIT MICROCONTROLLER |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36mA) 3. Packaging and Internal Circuit 1: Gate 2: Drai |
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