| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK2232 sly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temp |
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Toshiba Semiconductor |
2SK2200 ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te |
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Toshiba Semiconductor |
N-Channel MOSFET Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.25 125 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tc |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
2SK2267 ntinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati |
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Toshiba Semiconductor |
2SK2266 ymbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.92 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch |
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Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te |
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Toshiba Semiconductor |
N-CHANNEL MOS TYPE TRANSISTOR ntinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
N-Channel MOSFET |
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Toshiba Semiconductor |
2SK2237 |
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Toshiba Semiconductor |
2SK2231 |
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Toshiba |
2SK2201 /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) by using Super Junction Structure: DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.1 mA) 3. Packaging and Internal Circuit TK22A65X TO |
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Toshiba |
Silicon N-Channel Transistor • High Power Gain : Gps =20dB (Typ. ) (f=100MHz) • Low Noise Figure : NF=2dB (Typ. ) (f=100MHz) • High Forward Transfer Admittance : |y fs | = 7ms (Typ.) (f=lkHz) • High Input Impedance : Riss = 12kfi (Typ.) (f=100MHz) • Low Reverse Transfer Capacita |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
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Toshiba |
N-Channel MOSFET nder heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatu |
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