| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK1488 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
COLUMN AND ROW DRIVER LSI l LCD driver output l Built in display RAM l Gray scale l Word length l Duty cycle l Display modes : 64 rows + 128 columns + 128 icons : 65 × 128 × 2 = 16640 bits, 2-port RAM : 4 gray-scale selectable : 8-bit/word : 1/2 duty (power save mode) 1/35, 1 |
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Toshiba |
Silicon N-Channel MOSFET gnificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Fast reverse recovery time: trr = 100 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 |
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Toshiba Semiconductor |
N-CHANNEL MOS TYPE TRANSISTOR e this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tosh |
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Toshiba |
Transistor |
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Toshiba |
Transistor |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate |
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Toshiba |
TK14A55D ture/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxi |
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Toshiba Semiconductor |
2SK1489 he reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H |
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Toshiba |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit TK14V65W |
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Toshiba Semiconductor |
N-CHANNEL MOS TYPE TRANSISTOR he reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability H |
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Toshiba |
Silicon N-Channel MOSFET • High lyf s l : )yfsl=40mS(Typ.) (V DS =10V, VG S=0, I D SS=5mA) • High Breakdown Voltage : VGds =- 40V • Low Noise : NF=1.0dE (Typ . (VDS =10V, I D=5mA, f=lkHz, R=100ft) • High Input Impedance : I GSS=-lnA (Max.) (vGS =-30V) • High Drain P |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit TK14C65W |
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Toshiba Semiconductor |
2SK1486 e this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Tosh |
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