| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
2SJ681 V V V A A W mJ A mJ °C °C ０．８ MAX． １．1 MAX． Pulse(Note 1) JEDEC JEITA TOSHIBA ― ― 2-7J2B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) |
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Toshiba |
Silicon P-Channel MOSFET mJ 150 °C −55 to 150 °C 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURCE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e |
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Toshiba |
Silicon P-Channel MOSFET 0.9 1.1 ± 0.2 0.6 MAX. 4.1 ± 0.2 5.7 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under he |
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