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Toshiba Semiconductor |
2SJ377 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e. |
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Toshiba Semiconductor |
P-Channel MOSFET 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e. |
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Toshiba Semiconductor |
P-Channel MOSFET y loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curren |
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Toshiba |
2SJ378 |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V drive (3) Low drain-source on-resistance : RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V) 3. |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) |
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Toshiba |
Silicon P-Channel MOSFET (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) |
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