Toshiba C55 fiche technique

No.	Partie #	Fabricant	Description
1	2SC5589	Toshiba Semiconductor	NPN TRANSISTOR Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1
2	TC5514P	Toshiba	(TC5514P/AP/APL) 1024 x 4-Bit CMOS Static RAM
3	TC55257CPL	Toshiba Semiconductor	(TC55257xxx) Silicon Gate CMOS
4	C5587	Toshiba Semiconductor	2SC5587
5	TC55257BSPL-10LV	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs
6	TC55B88J-12	Toshiba	SILICON GATE CMOS STATIC RAM low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B88P/J is suitable for use in high speed applications such as cache memory and high speed storage. Al
7	TC551001BFTL-70L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2j.tA typically. The TC551 001 BPL has three cont
8	TC55257AF-12	Toshiba Semiconductor	STATIC RAM with a maximum operating current of 5mA/rnIz and minimum cycle time of 100nsi l20ns. Hhen CE is a logic
9	TC551001ATRL-85LT	Toshiba	SILICON GATE CMOS STATIC RAM with an operating Current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551 001 APL has three control
10	TC5501P	Toshiba	256 Word x 4-Bit CMOS RAM
11	TC55257CSPI-85L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mAlMHz iliP.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2~ at room temperature. The TC55257CPI has two control inputs. C
12	TC55257CTRL-10	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz iliP.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2jlA at room temperature. The TC55257CPL has two control inputs.
13	TC551001BFL-70L	Toshiba Semiconductor	SILICON GATE CMOS STATIC RAM with an operating current of 5mA/MHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2µA typically. The TC551001BPL has three control
14	TC554161FTL-70L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 10mNMHz (typ.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 601-!A (max.). The TC554161 FTUfRL has two control inputs. A chi
15	TC551001BPL-70L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2j.tA typically. The TC551 001 BPL has three cont
16	TC551001BTRL-70	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2jJA typically. The TC551 001 BPL has three contr
17	TC551001ATRL-70LT	Toshiba	SILICON GATE CMOS STATIC RAM with an operating Current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551 001 APL has three control
18	TC55257BPL-10L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz illP.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2~ at room temperature. The TC55257BPL has two control inputs. Ch
19	TC55257CFL-70L	Toshiba	SILICON GATE CMOS STATIC RAM with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 21lA at room temperature. The TC55257CPL has two control inputs.
20	TC5565APL-10	Toshiba Semiconductor	Static RAM with a maximum operating current of 5mA/MHz and maximum access time of 100ns/120ns/150ns. When CE2 is a logical low or \CEl is a logical high, the device is placed in low power standby mode in which standby current is 2uA typically. The TC5565APL/