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Toshiba Semiconductor |
2SC5404 |
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Toshiba |
2SC5460 ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure |
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Toshiba |
8-Bit CMOS Time Programmable ROM |
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Toshiba |
2SC547 |
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Toshiba |
Silicon NPN Transistor . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO TBC548 |
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Toshiba Semiconductor |
2SC5411 tter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VC |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba |
Octal Bus Buffer High speed: tpd = 3.7 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 4 A (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH tpHL |
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Toshiba |
2SC5459 ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaut |
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Toshiba |
Octal Bus Buffer (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 10 ns (typ.) at VCC = 6.0 V (3) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage ra |
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Toshiba |
Silicon NPN epitaxial planar type Transistor |
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Toshiba |
SILICON NPN TRIPLE DIFFUSED MESA TYPE TRANSISTOR Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 10 A VCE = 5 V, IC = 15 A |
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Toshiba Semiconductor |
2SC5422 e Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2. |
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Toshiba |
2SC5466 ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 h |
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Toshiba |
2SC5463 aracteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = |
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Toshiba |
2SC5468 |
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Toshiba |
Octal Bus Buffer (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 10 ns (typ.) at VCC = 6.0 V (3) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage ra |
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Toshiba Semiconductor |
NPN TRANSISTOR tput Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 7 A, IB = 1.75 A |
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Toshiba Semiconductor |
NPN TRANSISTOR or Output Capacitance Switching Time Storage Time Fall Time SYMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 |
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Toshiba Semiconductor |
NPN TRANSISTOR ctor-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE |
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