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Toshiba |
2SC4213 mperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabilit |
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Toshiba Semiconductor |
Silicon NPN Transistor mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19 |
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Toshiba Semiconductor |
Silicon NPN Transistor VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCC = 12 V, VAGC = 1.4 V f = 200 MHz (Figure 1) VCC = 12 V, GR = 30dB f = 200 MHz ¾ ¾ 100 nA ¾ ¾ 100 nA 30 ¾ ¾ V 60 150 300 ¾ 0.35 0.5 |
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Toshiba |
2SC4214 ase design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, e |
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Toshiba Semiconductor |
SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER APPLICATIONS) s product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba |
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Toshiba |
2SC4245 = 800 MHz, fL = 830 MHz (+2dBm) (Figure 1) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 ¾ 0.6 0.9 pF 1500 2400 ¾ MHz 12 17 ¾ dB ¾ 8 13 dB 1 2003-03-19 2SC4245 L1~L4: f0.8 mm silver plated copper wire L5: Coil with core SCN- |
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Toshiba |
2SC4249 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 2 mA VCC = 12 V, VAGC = 1.4 V f = 200 MHz (Figure 1) VCC = 12 V, GR = 30dB f = 200 MHz ¾ ¾ 100 nA ¾ ¾ 100 nA 30 ¾ ¾ V 60 150 300 ¾ 0.35 0.5 |
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Toshiba |
2SC4252 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 5 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 12 ¾ ¾ V 40 100 250 1.5 2.1 ¾ GHz ¾ 1.1 1.4 pF ¾ 4.3 10 ps Marking 1 2003-03-19 2SC4252 2 2003-03-19 2SC4252 3 2003-03-19 2SC4252 RESTRICTIO |
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Toshiba Semiconductor |
(TMP86Cx20x) High-performance and low power consumption 8-bit microcomuter including ROM |
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Toshiba Semiconductor |
TMP47C422F 4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datasheet4u.com www.datashe |
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Toshiba |
2SC4248 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 5 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 12 ¾ ¾ V 70 ¾ 130 3 4 ¾ GHz ¾ 1.05 1.35 pF ¾ 4.5 9.0 ps Marking 1 2003-03-19 2SC4248 2 2003-03-19 2SC4248 3 2003-03-19 2SC4248 RESTRICTIONS |
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Toshiba |
2SC4253 mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19 |
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Toshiba |
Dual Retriggerable Monostable Multivibrator (Note) • High speed: tpd = 25 ns (typ.) at VCC = 5 V • Low power dissipation Standby state: ICC = 4 μA (max) at Ta = 25°C Active state: ICC = 700 μA (max) at VCC = 5 V • High noise immunity: VNIH = VNIL = 28% VCC (min) • Output drive capability: 10 L |
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Toshiba Semiconductor |
SCHOTTKY BARRIER TYPE (SWITCHING TYPE POWER SUPPLY/ CONVERTER & CHOPPER APPLICATIONS) |
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Toshiba Semiconductor |
(TMP86Cx20x) High-performance and low power consumption 8-bit microcomuter including ROM |
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Toshiba |
2SC4207 ant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the approp |
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Toshiba |
2SC4244 3 V, IC = 1 mA VCE = 3 V, IC = 1 mA VCE = 2 V, IB = 0, f = 1 MHz VCC = 4.5 V, VAGC = 2.0 V f = 800 MHz (Figure 1) VCC = 4.5 V, G.R. = -20dB, f = 800 MHz Min ¾ ¾ 20 40 500 ¾ 12 ¾ (Note) 2.5 Typ. ¾ ¾ ¾ 100 850 0.4 17 4 3.2 Max 0.1 1 ¾ ¾ ¾ 0.55 ¾ 6 |
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Toshiba |
2SC4246 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 60 150 320 1100 1500 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC4246 2 2003-03- |
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Toshiba |
2SC4250 0, f = 1 MHz VCE = 10 V, IC = 5 mA VCC = 12 V, f = 200 MHz, fL = 260 MHz (Figure 1) ¾ ¾ 20 40 ¾ 900 20 ¾ Typ. Max ¾ ¾ ¾ 150 0.45 1400 25 4.3 100 1000 ¾ 300 0.6 ¾ ¾ 6 Unit nA nA V pF MHz dB dB 1 2003-03-19 2SC4250 L1: 0.8 mmf silver plated cop |
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Toshiba |
2SC4251 .1 mA ¾ ¾ 1.0 mA 15 ¾ ¾ V 40 100 200 650 1100 ¾ MHz ¾ 0.9 1.3 pF ¾ 7 12 ps Marking 1 2003-03-19 2SC4251 2 2003-03-19 2SC4251 3 2003-03-19 2SC4251 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the qua |
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