No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Toshiba Semiconductor |
HIGH EFFICIENCY DIODE STACK operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating |
|
|
|
Toshiba |
2SC4116 (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) |
|
|
|
Toshiba Semiconductor |
NPN Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 70 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) |
|
|
|
ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
|
|
|
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK = 200V trr tfr Rth (j−c) IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case TYP. MAX UNIT ― 0.98 V ― 10 µA ― 35 ns ― 100 ns ― 4.0 °C / W POLARITY MARKING * 1 MARK *2 A 5DL2C *3 1 2001-07-13 5DL2C41A 2 2001-07-13 5DL2C41A RE |
|
|
|
Toshiba Semiconductor |
TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER |
|
|
|
Toshiba |
2SC4117 r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ |
|
|
|
Toshiba |
NPN Transistor operating conditions (i.e. operating TOSHIBA 2-2E1A temperature/current/voltage, etc.) are within the absolute maximum Weight: 6.0 mg (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliabilit |
|
|
|
ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
|
|
|
ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
|
|
|
ToshibaSemiconductor |
DIODE |
|
|
|
ToshibaSemiconductor |
DIODE |
|
|
|
Toshiba Semiconductor |
HIGH-EFFICIENCY DIODE STACK |
|
|
|
Toshiba Semiconductor |
HIGH EFFICIENCY DIODE STACK (SWITCHING MODE POWER SUPPLY APPLICATION) |
|
|
|
Toshiba |
(TMP47C216F / TMP47C416F) CMOS 4 Bit MCU |
|
|
|
Toshiba |
(TMP47C216F / TMP47C416F) CMOS 4 Bit MCU |
|
|
|
Toshiba |
2SC4118 temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and indivi |
|
|
|
Toshiba |
CMOS 4-BIT SINGLE CHIP MICROCOMPUTER 4-bit single chip microcomputer with built-in ROM, RAM, input/output port, divider, timer/counter, and serial port. Instruction execution time: 4~s (at 4 MHz clock) Effective instruction set 90 instructions, software compatible in the series Subr |
|
|
|
Toshiba |
8-Bit Microcontroller LQFP100-P-1414-0.50C ˠ LQFP100-P-1414-0.50F All references to the previous package code and package dimensions were left unchanged in body text. The new ones are indicated on the prelims pages. ç 3. Addition of notes on lead solderability Now that th |
|
|
|
Toshiba Semiconductor |
Silicon NPN Transistor r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ |
|