| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
Silicon NPN Epitaxial Planar Type Transistor s. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could |
|
|
|
|
Toshiba |
2SC2553 . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba |
|
|
|
|
Toshiba |
Silicon NPN Transistor . High Breakdown Voltage : VCEO=50V, VEB0=8V • High Gain and Excellent hEE Linearity hFE- 70^400 at VCE=1V, I c=10mA • Complementary to 2SA1090. Iln it in mm 05.8MAX. 04.95MAX. 25 00.45 [|[ j2fe.54 MAXIMUM RATINGS fTa=25°r.^ CHARACTERISTIC Colle |
|
|
|
|
Toshiba |
2SC2500 erature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute m |
|
|
|
|
Toshiba |
2SC2562 • Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A) • High Speed Switching Time : t stg=1.0ys (Typ.) • Complementary to 2SA1012. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Colle |
|
|
|
|
Toshiba |
Silicon NPN Transistor . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0/is(Max. ) at I C=4A . High Collector Breakdown Voltage : V CEo=400V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba |
|
|
|
|
Toshiba |
2SC2555 |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR age and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Plea |
|
|
|
|
Toshiba |
2SC2551 uct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic |
|
|
|
|
Toshiba |
2SC2510 s. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could |
|
|
|
|
Toshiba Semiconductor |
2SC2552 |
|
|
|
|
Toshiba |
Color TFT LCD Module |
|
|
|
|
Toshiba |
2SC2532 within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabilit |
|
|
|
|
Toshiba Semiconductor |
TRANSISTOR |
|
|
|
|
Toshiba Semiconductor |
QUAD 2-CHANEL MULTIPLEXER (3-STATE) |
|
|
|
|
Toshiba |
Silicon NPN Transistor . Complementary to 2SA1093. . Recommended for 50W audio amplifier output stage. . High transition frequency : fT=90MHz (Typ. Unit in mm 159MAX ^3.2±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emit |
|
|
|
|
Toshiba |
Silicon NPN Transistor • Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A) • High Speed Switching Time : t stg=1.0ys (Typ.) • Complementary to 2SA1012. INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ^3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Colle |
|
|
|
|
Toshiba Semiconductor |
2-Channel Multiplexer • High speed: tpd = 3.6 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabilit |
|
|
|
|
Toshiba Semiconductor |
Silicon NPN Transistor uct to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic |
|