| No. | Partie # | Fabricant | Description | Fiche Technique |
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Thinki Semiconductor |
600V Insulated N-Channel Type Power MOSFET ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● { 3. Source BVDSS = 600V RDS(ON) = 0.75 ohm ID = 10.3A General Description This N-cha |
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Thinki Semiconductor |
7.5A 650V Insulated N-Channel Type Power MOSFETs ■ High ruggedness ■ RDS(on) (Max 1.0 Ω )@VGS=10V ■ Gate Charge (Typical 48nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 1. Gate{ { 2. Drain { ◀▲ ● { 3. Source General Description This N-channel enhancement mode field-effect power transis |
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