| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Thinki Semiconductor |
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier TO-263 Unit : inch (mm) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge ca |
|
|
|
|
Thinki Semiconductor |
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier TO-263 Unit : inch (mm) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge ca |
|
|
|
|
Thinki Semiconductor |
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier TO-263 Unit : inch (mm) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge ca |
|
|
|
|
Thinki Semiconductor |
20.0 Ampere Surface Mount PhotoVoltaic Bypass Schottky Barrier Rectifier For surface mounted application Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High sur |
|