| No. | Partie # | Fabricant | Description | Fiche Technique |
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Thinki Semiconductor |
N-Channel Power MOSFET • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V • Low gate charge ( typical 31 nC) • Low Crss ( typical 65 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● { |
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Thinki Semiconductor |
N-Channel Power MOSFET • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V • Low gate charge ( typical 48 nC) • Low Crss ( typical 100 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating 1. Gate { { 2. Drain ● ◀▲ ● ● |
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