| No. | Partie # | Fabricant | Description | Fiche Technique |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed: 260°C / 10 seconds at te |
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Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor Company |
(SF2001G - SF2008G) Glass Passivated Super Fast Rectifiers High efficiency, low VF High current capability High reliability High surge current capability Low power loss. For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Mechanical Data Cases: TO-220AB Molded |
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Taiwan Semiconductor Company |
(SF2001PT - SF2008PT) Glass Passivated Super Fast Rectifiers |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002 |
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Taiwan Semiconductor |
Glass Passivated Super Fast Rectifiers ● AEC-Q101 qualified available ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC c |
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Taiwan Semiconductor |
Glass Passivated Super Fast Rectifiers ● AEC-Q101 qualified available ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC c |
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Taiwan Semiconductor |
Super Fast Rectifiers - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definitio |
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Taiwan Semiconductor |
Dual High-Voltage Trench Schottky Rectifier - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Hal |
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Taiwan Semiconductor |
Trench Schottky Rectifier - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halog |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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Taiwan Semiconductor |
Super Fast Rectifier ● Glass passivated chip junction ● High efficiency, Low VF ● High current capability ● High surge current capability ● Low power loss ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249- |
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