Taiwan Semiconductor BZW fiche technique

No.	Partie #	Fabricant	Description
1	BZW06-171B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
2	BZW04-102	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
3	BZW06-58	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
4	BZW06-15B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
5	BZW06-20	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
6	BZW06-28	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
7	BZW06-31	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
8	BZW06-48	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
9	BZW06-154	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
10	BZW06-188	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
11	BZW06-13B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
12	BZW06-31B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
13	BZW06-58B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
14	BZW06-299B	Taiwan Semiconductor Company	Transient Voltage Suppressor Diodes - Excellent clamping capability - Low dynamic impedance - 600W surge capability at 10 / 1000 μs waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional and 5.0ns for bidirectional - Typical IR less than 1μA abov
15	BZW04-6V4	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
16	BZW04-10	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
17	BZW04-33	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
18	BZW04-48	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
19	BZW04-145	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9
20	BZW04-342	Taiwan Semiconductor	Transient Voltage Suppressor - Excellent clamping capability - Low impedance surge resistance - 400W surge capability at 10 / 1000 μs waveform - Very fast response time - Typical IR less than 1μA above 10V - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/9