| No. | Partie # | Fabricant | Description | Fiche Technique |
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Huajing Microelectronics |
N-type Silicon Schottky Rectifier Diode |
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Huajing Microelectronics |
Silicon Schottky rectifier diode |
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Huajing Microelectronics |
N-type Silicon Schottky Rectifier Diode |
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Huajing Microelectronics |
Silicon Schottky rectifier diode |
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Huajing Microelectronics |
N-type silicon Schottky rectifier diode Diode） 100 75℃ 125℃ 25℃ 10 IF (A) IF (A) 11 IR (mA) 0.1 0.2 0.4 0.6 0.8 1 1.2 VF (V) IR-VR (Per Diode) 10 125℃ 1 0.1 0.01 0.001 75℃ 25℃ 0.0001 0 20 40 60 80 100 VR (V) IF-TC (Per Diode) 18 Pulse Test:tp=300μs,δ≤2% 16 14 12 Squar |
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Frontier Electronics |
20A SCHOTTKY BARRIER RECTIFIERS 1. FLAMMABILITY CLASSIFICATION 94V-0 2. EXTREMELY LOW VF 3. LOW STORED CHARGE 4. MAJORITY CARRIER CONDUCTION 5. LOW POWER LOSS/HIGH EFFICIENCY 6. CASE: TRANSFER MOLDED TO-220AB FOR MBR20xxxCT ITO-220AB FOR MBR20xxxFCT 7. DIMENSIONS IN INCHES AND (MIL |
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STMicroelectronics |
power Schottky rectifier High junction temperature capability Good trade-off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK®2 compliant component for DPAK on demand November 2016 This is information on a |
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STMicroelectronics |
Ultrafast recovery - 1200 V diode and benefits ■ ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current operation High reverse voltage capability High junction temperature Insulated package: Electrical insulation = 2500 |
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SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER • 150 ℃ TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a |
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PCA Electronics |
14 Pin DIP 5 Tap Low Profile TTL Compatible Active Delay Lines 188, 282, 376 100, 200, 300, 400 Total Delay (†±5% or ± 2nS) 200 225 250 300 350 400 420 440 450 470 500 †Whichever is greater. Delay times referenced from input to leading and trailing edges at 25°C, 5.0V, with no load. DC Electrical Characterist |
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Huajing Microelectronics |
N-type Silicon Schottky Rectifier Diode |
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ST Microelectronics |
High voltage power Schottky rectifier • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 complian |
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ST Microelectronics |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability s s s s K A1 A2 DESCRIPTION High voltage dual Schottky rectifier suited for switchmode power supplies and other power converters. Packaged |
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Universal Microelectronics |
3 Watt DC-DC Converter ... -25°C to +71°C Cooling ….………………….………… Free Air Convection Storage Temperature Range ….…………. -40°C to +100°C Dimensions CASE A ……..…..…….….. 1.25*0.8*0.4 inches (31.8*20.3*10.2mm) Case Material Standard Models ……….. Non-Conductive Black Plastic UL |
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TT Electronics |
High Temperature Thick Film Chip Resistors ndition B Resistance to Soldering Heat Solderability Note2 : 0.01W added for all resistance values <10W. MIL-STD-202 Method 210F MIL-STD-202 Method 208 (245°C, 5 seconds) Specification Maximum2 Typical 1.00% 0.25% 1.00% 0.20% 1.00% 0.10% |
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STMicroelectronics |
High voltage power Schottky rectifier • High junction temperature capability • Good trade off between leakage current and forward voltage drop • Low leakage current • Avalanche capability specified • Insulated package: TO-220FPAB – Insulating voltage = 2000 VRMS sine • ECOPACK®2 complian |
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SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER • 200°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a |
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SANGDEST MICROELECTRONICS |
SCHOTTKY RECTIFIER • 150°C TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness a |
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Huajing Microelectronics |
Silicon Schottky rectifier diode |
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Huajing Microelectronics |
Silicon Schottky rectifier diode |
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