| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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ITT Industries |
1-4 Poles Coded Rotary Switches Benefits • PCB or hand soldering versions • Bushing mounting • Multiple poles • Decimal and hexadecimal codes • Screwdriver slot or extended actuator • RoHS Compliant Lead Free Electrical Data Silver Gold BBM 0.5 VA 20 mA 1A 25 V < 150 mΩ www.DataSh |
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TT |
N-Channel Enhancement Mode Power MOSFET or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552 |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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SeCoS |
Schottky Barrier Bridge Rectifiers Ideal for printed circuit board Lead tin plated copper Reliable low cost construction utilizing molded plastic technique results in inexpensive product MECHANICAL DATA Polarity:Symbol molded on body Mounting position :Any PACKAGE INFORMATION Packag |
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ON Semiconductor |
Surface Mount Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Compact Package with J−Bend Leads Ideal |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base br |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base br |
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TT |
SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features Compact Package with J−Bend Leads Ideal |
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ON Semiconductor |
Schottky Power Rectifier epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features Compact Package with J−Bend Leads Ideal |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base br |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base br |
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Siemens Semiconductor Group |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) .91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base b |
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Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) 91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base br |
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