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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
PLASTIC POWER TRANSISTORS VCEO VCB= Half Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP110/115 TIP111/116 TIP112/117 Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=8mA Base Emitter On Voltage DC Current Gain *VBE(on) *hFE *Pulse Test : Pulse width =300µs, D |
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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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Transys |
SILICON PLANAR POWER DARLINGTON TRANSISTORS ty Cycle=1.5% TEST CONDITION VCB=100V, IE=O VCE=50V, IB=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, VCE=4V IC=5A, VCE=4V IC=10A, VCE=4V MIN TYP MAX 1.0 2.0 2.0 100 2.0 3.0 3.0 1000 500 Ic=10A, IB1=IB2= - 40mA, RL=3Ω 0.9 4. |
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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
PLASTIC POWER TRANSISTORS ector Emitter (sus) Voltage ICBO IEBO *VCEO(sus) VCB= Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP130/135 TIP131/136 TIP132/137 IC=4A, IB=16mA IC=6A, IB=30mA IC=4A, VCE=4V IC=1A, VCE=4V IC=4A, VCE=4V MIN MAX 0.5 0.2 5.0 UNIT mA mA mA V V V V V V 60 |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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TRANSYS |
PLASTIC POWER TRANSISTORS VCEO VCB= Half Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP110/115 TIP111/116 TIP112/117 Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=8mA Base Emitter On Voltage DC Current Gain *VBE(on) *hFE *Pulse Test : Pulse width =300µs, D |
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TRANSYS |
PLASTIC POWER TRANSISTORS VCEO VCB= Half Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP110/115 TIP111/116 TIP112/117 Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=8mA Base Emitter On Voltage DC Current Gain *VBE(on) *hFE *Pulse Test : Pulse width =300µs, D |
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TRANSYS |
PLASTIC POWER TRANSISTORS VCEO VCB= Half Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP110/115 TIP111/116 TIP112/117 Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=8mA Base Emitter On Voltage DC Current Gain *VBE(on) *hFE *Pulse Test : Pulse width =300µs, D |
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TRANSYS |
PLASTIC POWER TRANSISTORS VCEO VCB= Half Rated VCBO VEB=5V, IC=0 IC=30mA, IB=0 TIP110/115 TIP111/116 TIP112/117 Collector Emitter Saturation Voltage *VCE (sat) IC=2A, IB=8mA Base Emitter On Voltage DC Current Gain *VBE(on) *hFE *Pulse Test : Pulse width =300µs, D |
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Transys |
SILICON PLANAR POWER DARLINGTON TRANSISTORS ty Cycle=1.5% TEST CONDITION VCB=100V, IE=O VCE=50V, IB=0 VEB=5V, IC=0 IC=30mA, IB=0 IC=5A, IB=10mA IC=10A, IB=40mA IC=10A, VCE=4V IC=5A, VCE=4V IC=10A, VCE=4V MIN TYP MAX 1.0 2.0 2.0 100 2.0 3.0 3.0 1000 500 Ic=10A, IB1=IB2= - 40mA, RL=3Ω 0.9 4. |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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TRANSYS |
SILICON PLANAR DARLINGTON POWER TRANSISTORS |
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