| No. | Partie # | Fabricant | Description | Fiche Technique |
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TRANSYS Electronics Limited |
(2N5679 - 2N5682) PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Cur |
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TRANSYS Electronics |
Plastic-Encapsulated Transistors Power dissipation TRANSISTOR (NPN) TO—92 1. EMITTER DataSheet4U.com PCM : 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : 0.5 Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +1 |
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TRANSYS Electronics Limited |
(2N5679 - 2N5682) PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Cur |
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TRANSYS Electronics Limited |
(2N5679 - 2N5682) PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Cur |
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TRANSYS Electronics Limited |
(2N5679 - 2N5682) PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 0V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Cur |
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