| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
TGS |
NPN Silicon Power Transistors , IC=8.0A IC=8.0A,IB=1.6A IC=12.0A,IB=3.0A Base-Emitter Saturation Voltage Current Gain Bandwidth Product Storage Time Min. — — 400 8 6 — — — 4 — Typ. — — — — — — — — — 3.5 Max. 1.0 1.0 — 40 30 1.5 3.0 1.6 — 4 V MHz us V Unit mA mA V O ICEO IEBO VC |
|
|
|
|
TGS |
Complementary Silicon Power Ttransistors |
|
|
|
|
TGS |
Complementary Silicon Power Ttransistors |
|