डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI5867-25L | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dBm ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION
IM3= -40dBc(Min. |
Toshiba |
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TGI5867-25L | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |