डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI5059-120L | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI5059-120L
FEATURES
・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER
Pout= 51.0dBm at Pin= 42.0dBm ・HIGH GAIN
GL= 13.5dB at Pin= 20.0dBm ・LOW INTERMODULATION DISTORTION
IM3(Min |
Toshiba |
|
TGI5059-120L | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |