डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
TGI1314-50LA | MICROWAVE POWER GaN HEMT MICROWAVE POWER GaN HEMT
TGI1314-50LA
FEATURES
・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER
Pout= 47.0dBm at Pin= 42.0dBm
・HIGH GAIN
GL= 8.0dB at 13.75GHz to 14.5GHz
・LOW INTERMODULATION DISTORTION
I |
Toshiba |
|
TGI1314-50LA | MICROWAVE POWER GaN HEMT | Toshiba |
www.DataSheet.in | 2017 | संपर्क |