| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
|
|
|
|
TGD |
N-Channel Enhancement Mode Power MOSFET ● VDS =40V,ID =120A RDS(ON) <4.0mΩ @ VGS=10V RDS(ON) <7mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat di |
|