| No. | Partie # | Fabricant | Description | Fiche Technique |
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TEMIC |
N-Channel MOSFET ndition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward nansconductanceb Dynamic V(BR)DSS VOS(tb) loss IDSS ID(on) 'DS |
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TEMIC |
N-Channel MOSFET ns (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward |
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TEMIC |
N-Channel MOSFET Condition Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward TIansconductanceb V(BR)DSS VGS(tb) IGSS loss 10(on) toston) |
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TEMIC |
P-Channel Transistor conix Parameter Symbol Test Condition Statie Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward 'llansconductanceb Dynamic V(B |
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Temic |
N-Channel Transistor |
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