| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Quad 2-Input NAND Gate • High speed: tpZ = 3.7 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 2 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Wide operating voltage range: VCC (opr) = 2 |
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