TC58NYG2S0HBAI6 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| TC58NYG2S0HBAI6 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM TC58NYG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0HBAI6 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically E |
 Toshiba |
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| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM | Toshiba |
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| TC58NYG2S0HBAI6 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM | Toshiba |
शेयर लिंक :
[1]
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