| No. | Partie # | Fabricant | Description | Fiche Technique |
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Super Semiconductor |
600V N-Channel MOSFET • 650V @TJ = 150°C • Typ. RDS(on) = 0.16 • Ultra Low Gate Charge (typ. Qg = 70nC) • 100% avalanche tested D GDS TO-220 GD S TO-220F G S Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Dr |
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