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Dual N-Channel Enhancement Mode MOSFET • 20V/6A, RDS(ON)= 23mΩ(typ.) @ VGS= 4.5V RDS(ON)= 34mΩ(typ.) @ VGS= 2.5V Pin Description S2 G2 S2 D2 • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (1) D1 S1 G1 D1 S1 Top View of T |
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