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Sony Corporation |
Baseband analog processing IC for dual-mode CDMA/FM cellular phone • Receive signal path includes: · IF to baseband down conversion · Built-in trim-free low-pass filter for CDMA and FM · Built-in A/D convertor convert the RX base band signal to the digital signal · Analog output Receive Signal Strength Indicator (RS |
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Sony Corporation |
SP3T Antenna Switch for TDMA800/1900/AMPS800 Triple Mode Application • Low second harmonics < –31dBm at 29dBm @2.8V • Low insertion loss: 0.3dB (Ant. – AMPS) • Small package size: TSSOP-10pin (3.2mm × 2.8mm) Applications TDMA800/1900/AMPS800 triple mode handsets. Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta |
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Sony Corporation |
Power Amplifier Module for JCDMA • Single power supply operation: VDD1 = VDD2 = 3.5V, VGG = 2.95V (@High mode), VGG = 2.7V (@Low mode) • Ultrasmall package: 0.065cc (6.2mm × 6.2mm × 1.7mm) • High efficiency: ηadd = 37.5% (@900MHz, POUT = 27dBm) • Output power (high/low mode switchin |
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Sony Corporation |
Magnetoresistance Element • Low power consumption M-110 (Plastic) 11 mW (Typ.) VCC=5 V • Low magnetic field and high sensitivity 80 mVp-p (Typ.) VCC=5 V H=8000 A/m • High reliability Ensured through silicon Nitride protective filming Structure Thin-film nickel-cobalt magneti |
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Sony Corporation |
Magnetoresistance Element • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m • Fitted with bias magnet: stable output. • High reliability: Achieved through silicon nitride protective film. Structure |
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Sony Corporation |
Analog Signal Processor TX-IF IC for W-CDMA Cellular Phones • Gain control amplifier with a linear and wide gain variable range • I-Q quadrature modulator • Power saving switch • Low voltage operation (2.7 to 3.3V) • Small package (24-pin VQFN) Applications Analog signal processor TX-IF IC for the W-CDMA cell |
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Sony Corporation |
Power Amplifier Module for JCDMA • Single power supply operation: VDD1 = VDD2 = 3.5V (High mode), 1.7V (Low mode), VGG = 2.95V • Ultrasmall package: 0.065cc (6.2mm × 6.2mm × 1.7mm) • High efficiency: ηadd = 36.5% (@900MHz, POUT = 27.5dBm) • Output power (high/low mode switching supp |
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Sony Corporation |
Magneto-Resistance Element • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 75mVp-p (Typ.) at VCC=5V and H=4000A/m • High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C) • Supply voltage V |
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Sony Corporation |
Magnetoresistance Element • Low magnetic field and high sensitivity: bridge type stands for large output voltage 150 mVp-p (Min.) at VCC=5 V, H=14400 A/m • Fitted with bias magnet: stable output. • High reliability: Achieved through silicon nitride protective film. Structure |
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