| No. | Partie # | Fabricant | Description | Fiche Technique |
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Solid States Devices |
(SFS1826 - SFS1829) SILICON CONTROLLED RECTIFIER • • • • • • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLL |
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Solid States Devices |
(SFS1826 - SFS1829) SILICON CONTROLLED RECTIFIER • • • • • • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLL |
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Solid States Devices |
(SFS1826 - SFS1829) SILICON CONTROLLED RECTIFIER • • • • • • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLL |
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Solid States Devices |
(SFS1826 - SFS1829) SILICON CONTROLLED RECTIFIER • • • • • • Low-Level Gate Characteristics IGT = 200 µA (Max) @ 25oC Low Holding Current IH = 1 mA (Max) @ 25oC Anode Common to Case Hermetically Sealed TX, TXV, S-Level Screening Available. Consult Factory 1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLL |
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