| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Silikron Semiconductor |
MOSFET and Benefits: D2PAK Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating |
|
|
|
|
Silikron Semiconductor |
MOSFET and Benefits: TO-220 SSFT4003 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operatin |
|
|
|
|
Silikron Semiconductor Co |
MOSFET ge Operating Junction and Storage Temperature Range Max. 84 76 310 150 1.5 ±20 400 20 30 –55 to +150 W W/ ْC V mJ mJ v/ns ْC A Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS VGS(th) IDSS Drain-to-Source breakd |
|
|
|
|
Silikron Semiconductor |
MOSFET ion-to-case Junction-to-ambient — — Max. 160 100 640 150 2.0 ±20 480 TBD 31 –55 to +150 Typ. Max. 0.83 — — 62 Units A W W/ْ C V mJ mJ v/ns ْC Units ْC/W Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. U |
|
|
|
|
Silikron Semiconductor Co |
N-Channel MOSFET age Temperature Range 80 70 320 192 2.0 ±20 460 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018D TOP View (TO220) Max. Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdow |
|
|
|
|
Silikron Semiconductor Co |
Power switching application Max. 110 80 400 150 2.0 ±20 31 ② 480 TBD –55 to +150 Units A W W/ْ C V v/ns mJ Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source voltage Peak diode recov |
|
|
|
|
Silikron Semiconductor |
MOSFET and Benefits: Advanced trench MOSFET process technology Special designed for Convertors and power controls Ultra low on-resistance 175℃ operating temperature High Avalanche capability and 100% tested TO220 Marking and pin Assignment Schema |
|
|
|
|
Silikron Semiconductor Co |
N-Channel MOSFET — — Min. — — Typ. — 7.2 Typ. 1.03 — Max. Units — 10 4.0 — 2 10 100 -100 μA V V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor Gate-to-Source vol |
|
|
|
|
Silikron Semiconductor |
MOSFET ● VDS = -20V,ID = -3A RDS(ON) < 115mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Power management S Schematic |
|
|
|
|
Silikron Semiconductor |
MOSFET and Benefits: TO-220 SSFT4003 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operatin |
|
|
|
|
Silikron Semiconductor Co |
Battery protection ● VDS = 20V,ID = 4.5A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery protection ●Load switch ●P |
|
|
|
|
Silikron Semiconductor Co |
Battery protection ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 54mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V ESD Rating：3000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking |
|
|
|
|
Silikron Semiconductor Co |
Battery protection ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●Battery prot |
|
|
|
|
Silikron Semiconductor Co |
PWM applications ● VDS = -20V,ID = -5A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 60mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package S Schematic diagram Pin Assignment Application ●PWM applications ●Load |
|
|
|
|
Silikron Semiconductor Co |
N-Channel MOSFET ge Temperature Range Max. 60 50 240 147 2.0 ±20 480 TBD –55 to +150 ْC W W/ْ C V mJ A SSF3018 TOP View (TO220) Units Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source breakdown |
|
|
|
|
Silikron Semiconductor Co |
Schottky Diode ● MOSFET VDS = -20V,ID = -3.3A RDS(ON) < 180mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ● SCHOTTKY VR = 30V, IF = 2A, VF<0.53V @ 1.0A ● High Power and current handing capability ● Lead free product is acquired ● Surface Moun |
|
|
|
|
Silikron Semiconductor Co |
PWM applications ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power |
|
|
|
|
Silikron Semiconductor Co |
Power switching application — — Min. — — Typ. — 9 Typ. 1.25 — Max. Units — 10 4.0 — 2 10 100 -100 μA VGS=20V VGS=-20V V mΩ V S Max. — 62 Units ْC/W Continuous drain current,VGS@10V Continuous drain current,VGS@10V Pulsed drain current ① Power dissipation Linear derating factor |
|
|
|
|
Silikron Semiconductor Co |
Battery protection ● VDS = -30V,ID = -5.3A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D 8 D D 7 D 6 5 9435 1 2 3 4 S S S G Marking and pin Assignment A |
|
|
|
|
Silikron Semiconductor |
MOSFET and Benefits: TO220 Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperat |
|