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Siliconix |
N-Channel Enhancement-Mode MOS Transistors internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors mum junction temperature 6-79 VN1210 SERIES ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors unction temperature 6-83 VN1706L, VN1706M ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~ |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors width limited by maximum junction temperature 6-S1 VN1706B, VN1706D ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drai |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors width limited by maximum junction temperature 6-S1 VN1706B, VN1706D ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drai |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors mum junction temperature 6-79 VN1210 SERIES ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 |
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Siliconix |
N-Channel MOSFET d by maximum junction temperature 6-77 VN1206L, VN1206M ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-R |
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Siliconix |
N-Channel MOSFET imum junction temperature 2Absolute maximum ratings have been revised from previous data sheet VN1206D 6.25 UNITS °C/W 6-75 VN1206B, VN1206D ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate- |
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Siliconix |
N-Channel MOSFET imum junction temperature 2Absolute maximum ratings have been revised from previous data sheet VN1206D 6.25 UNITS °C/W 6-75 VN1206B, VN1206D ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate- |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors 300 THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL VN0610LL VN10LE Junction-to-Ambient RthJA 156 400 1 Pulse width limited by maximum junction temperature 2Reference case for all temperature testing VN10LM UNITS 125 °C/W 6-71 VN0610LL, VN1 |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors 300 THERMAL RESISTANCE THERMAL RESISTANCE SYMBOL VN0610LL VN10LE Junction-to-Ambient RthJA 156 400 1 Pulse width limited by maximum junction temperature 2Reference case for all temperature testing VN10LM UNITS 125 °C/W 6-71 VN0610LL, VN1 |
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Vishay Siliconix |
N-Channel 60-V (D-S) MOSFETs D D D D D Low On-Resistance: 2.5 W Low Threshold: <2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffering High-Speed Circ |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors mum junction temperature 6-85 VN1710 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~ |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors mum junction temperature 6-85 VN1710 SERIES ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~ |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors unction temperature 6-83 VN1706L, VN1706M ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~ |
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Siliconix |
N-Channel MOSFET d by maximum junction temperature 6-77 VN1206L, VN1206M ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-R |
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Siliconix |
(VN1xxD) MOSPOWER |
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Siliconix |
(VN1xxD) MOSPOWER |
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Siliconix |
(VN1xxD) MOSPOWER |
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