| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siliconix |
N-Channel JFET 0 1200 loss MAX (mA) 2 3.5 5 SOT-143 TOP VIEW ~ 2 ~ 4 3 1 GATE 2 DRAIN 3 SOURCE 4 DIODES (4TH) PRODUCT MARKING SST6908 B08 SST6909 B09 SST6910 B10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITION |
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Siliconix |
N-Channel JFET rwise noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT UNITS Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) |
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Siliconix |
N-Channel Depletion-Mode Lateral DMOS FETs unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL SD2100 LIMIT SST2100 Gate-Source Voltage VGS ± 25 ± 25 Drain-Source Voltage VDS 25 25 Drain Current ID 50 50 Power Dissipation (TA= 25°C) PD 350 350 Power Derating 2.8 |
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Siliconix |
Low-Leakage Pico-Amp Diodes leakage currents ranging from -5 pA (SSTPAD5) to -500 pA (SSTPAD500) to support varying system requirements. Its SOT-23 package allows designers to maximize circuit performance while maintaining the objectives of low cost and compact packaging. Tape |
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Siliconix |
P-Channel JFET low on-resistance and good off-isolation as well as the fast switching associated with JFETs. They are housed in SOT-23 packages and are available tape and reeled to support automated assembly. (See Section 8.) For additional design information pleas |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical " spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • TO-18, See SD211DE Series • Quad |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical " spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • TO-18, See SD211DE Series • Quad |
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Siliconix |
Dual Low-Leakage Pic0-Amp Diodes leakage currents ranging from -5 pA (SSTDPAD5) to -100 pA (SSTDPAD100) to support a wide range of applications. With two diodes per package, the SSTDPAD5 Series is well suited for use in applications such as input protection for operational amplifier |
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Siliconix |
Dual Low-Leakage Pic0-Amp Diodes leakage currents ranging from -5 pA (SSTDPAD5) to -100 pA (SSTDPAD100) to support a wide range of applications. With two diodes per package, the SSTDPAD5 Series is well suited for use in applications such as input protection for operational amplifier |
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Siliconix |
Dual Low-Leakage Pic0-Amp Diodes leakage currents ranging from -5 pA (SSTDPAD5) to -100 pA (SSTDPAD100) to support a wide range of applications. With two diodes per package, the SSTDPAD5 Series is well suited for use in applications such as input protection for operational amplifier |
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Siliconix |
N-Channel JFET 0 1200 loss MAX (mA) 2 3.5 5 SOT-143 TOP VIEW ~ 2 ~ 4 3 1 GATE 2 DRAIN 3 SOURCE 4 DIODES (4TH) PRODUCT MARKING SST6908 B08 SST6909 B09 SST6910 B10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITION |
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Siliconix |
P-Channel JFET low on-resistance and good off-isolation as well as the fast switching associated with JFETs. They are housed in SOT-23 packages and are available tape and reeled to support automated assembly. (See Section 8.) For additional design information pleas |
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Siliconix |
N-Channel JFET rwise noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMIT UNITS Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) |
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Siliconix |
N-Channel JFET Pairs extremely low noise and gate leakage and is intended for use in a wide range of precision instrumentation. For ease of manufacturing, the symmetrical pinout prevents improper orientation. Finally, tape and reel options are available to make this prod |
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Vishay Siliconix |
Current Regulator Diodes D Surface-Mount Package D Guaranteed "20% Tolerance D Operation from 1 V (SST502, 3) to 45 V D Good Temperature Stability BENEFITS D Simple Series Circuitry, No Separate Voltage Source D Tight Guaranteed Circuit Performance D Excellent Performance i |
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Vishay Siliconix |
Current Regulator Diodes D Surface-Mount Package D Guaranteed "20% Tolerance D Operation from 1 V (SST502, 3) to 45 V D Good Temperature Stability BENEFITS D Simple Series Circuitry, No Separate Voltage Source D Tight Guaranteed Circuit Performance D Excellent Performance i |
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Vishay Siliconix |
Current Regulator Diodes D Surface-Mount Package D Guaranteed "20% Tolerance D Operation from 1 V (SST502, 3) to 45 V D Good Temperature Stability BENEFITS D Simple Series Circuitry, No Separate Voltage Source D Tight Guaranteed Circuit Performance D Excellent Performance i |
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Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical " spikes" or overstress. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • TO-18, See SD211DE Series • Quad |
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Siliconix |
Low-Leakage Pico-Amp Diodes leakage currents ranging from -5 pA (SSTPAD5) to -500 pA (SSTPAD500) to support varying system requirements. Its SOT-23 package allows designers to maximize circuit performance while maintaining the objectives of low cost and compact packaging. Tape |
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Siliconix |
Low-Leakage Pico-Amp Diodes leakage currents ranging from -5 pA (SSTPAD5) to -500 pA (SSTPAD500) to support varying system requirements. Its SOT-23 package allows designers to maximize circuit performance while maintaining the objectives of low cost and compact packaging. Tape |
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