No. | Partie # | Fabricant | Description | Fiche Technique |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV |
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