| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors internal gate-source Zener diode VN10KM UNITS 125 °C/W 6-69 VN0610L, VN10KE, VN10KM ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL. TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VGS(th) VGs=OV,10=100.l |
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Vishay Siliconix |
3-W High-Voltage Switchmode Regulator D 10- to 70-V Input Range D Current-Mode Control D On-Chip 150-V, 5-W MOSFET Switch D Reference Selection Si9100 − "1% D High Efficiency Operation (> 80%) D Internal Start-Up Circuit D Internal Oscillator (1 MHz) D SHUTDOWN and RESET DESCRIPTION The |
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Siliconix |
N-Channel Depletion-Mode MOS Transistor ce Cutoff Voltage Gate-Body Leakage Drain Cutoff Current Drain-Source On-Resistance Forward Transconductance DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Time Turn-Off Time SYMBOL V(BR)DSV VGS(OFF) IGSS |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors nce case for all temperature testing 6-46 ND2410L 156 ND2410B 125 UNITS DC/W ~Siliconix ..LII inccrpcrated ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(BR)OSV |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors erence case for all temperature testing 6-44 ND2406L 156 ND2406B 125 UNITS DC/W .rSiliconix .LJII incorporated ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage SYMBOL V(B |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistor n-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Resistance3 Drain-Source On-Voltage 3 ~~~:6~nductance3 Common Source Output Conductance3,4 DYNAMIC V(BR)DSS |
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Siliconix |
N-channel enhancement mode MOS transistor |
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Siliconix |
Dual N-Channel Enhancement Mode MOSFET |
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Vishay Siliconix |
Surface Mount Common Mode Choke • Operating temperature -40 °C to +85 °C • Excellent solderability and resistance to soldering heat • Suitable for flow and reflow soldering • High reliability and easy surface mount assembly • Material categorization: for definitions of compliance p |
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Vishay Siliconix |
Surface Mount Common Mode Choke • Operating temperature: -40 °C to +85 °C • Excellent solderability and resistance to soldering heat • Suitable for flow and reflow soldering • High reliability and easy surface mount assembly • Material categorization: for definitions of compliance |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors perature 2Reference case for all temperature testing 6-42 ND2020L 156 ND2020E 400 UNITS DC/W ~ ttCriSnciolripcooranteri:x:l ELECTRICAL CHARACTERISTICS1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Body Leakage |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate |
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Siliconix |
N-Channel Depletion-Mode MOS Transistors m junction temperature 2Reference case for all temperature testing 6-40 ND2012L 156 ND2012E 400 UNITS °C/W ..LrI-ISiinlciocrpoonratiexd ELECTRICAL CHARACTERISTICS 1 PARAMETER STATIC Drain-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate |
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Siliconix |
P-Channel Enhancement-Mode MOS Transistors Gate-Body Leakage Zero Gate Voltage Drain Current Zero-Gate Voltage Source Current On-State Drain Current 3 V(BR)OSS VGS = 0 V, 10 = -10J.LA V(BR)SOS VGo =VBO = 0 V, Is = -10J.LA VGS(lh) VGS =Vos , 10 = -10J.LA V GS Vos = -15 V, 10 = -0.5 mA |
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Siliconix |
P-Channel Enhancement-Mode MOS Transistors Gate-Body Leakage Zero Gate Voltage Drain Current Zero-Gate Voltage Source Current On-State Drain Current 3 V(BR)OSS VGS = 0 V, 10 = -10J.LA V(BR)SOS VGo =VBO = 0 V, Is = -10J.LA VGS(lh) VGS =Vos , 10 = -10J.LA V GS Vos = -15 V, 10 = -0.5 mA |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistor ATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 Drain-Source On-Voltage 3 ~~~;~~nductance 3 Common Source Output Conductance3 ,4 OYNAMIC |
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Siliconix |
P-Channel Enhancement-Mode MOS Transistors D High-Side Switching D Low On-Resistance: 1.5 W D Moderate Threshold: –3.1 V D Fast Switching Speed: 17 ns D Low Input Capacitance: 60 pF Benefits D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Switchin |
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Siliconix |
N-Channel Enhancement-Mode MOS Transistors internal gate-source zener diode VN2222KM 125 VN2222L 156 UNITS °C/W 6-89 VN2222KM, VN2222L ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VaS(th) Vas =OV, |
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