| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Vishay Siliconix |
N-channel MOSFET • Low on-resistance: 2 • Low threshold: 2 V (typ.) • Low input capacitance: 25 pF Available • Fast switching speed: 25 ns Available • Low input and output leakage • TrenchFET® power MOSFET Available • 2000 V ESD protection • Material categ |
|
|
|
|
Siliconix |
N-Channel Enhancement-Mode MOS Transistor n-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Resistance3 Drain-Source On-Voltage 3 ~~~:6~nductance3 Common Source Output Conductance3,4 DYNAMIC V(BR)DSS |
|
|
|
|
Siliconix |
N-channel enhancement mode MOS transistor |
|
|
|
|
Siliconix |
N-Channel Enhancement-Mode MOS Transistor ATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 Drain-Source On-Voltage 3 ~~~;~~nductance 3 Common Source Output Conductance3 ,4 OYNAMIC |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS Quad FETs very low interelectrode capacitance and on-resistance to achieve low insertion loss, crosstalk, and feedthrough performance. The threshold voltage for all switches is 2 V maximum, simplifying driver requirements for low level signal applications. For |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET D D D D D Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS Quad FETs very low interelectrode capacitance and on-resistance to achieve low insertion loss, crosstalk, and feedthrough performance. The threshold voltage for all switches is 2 V maximum, simplifying driver requirements for low level signal applications. For |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS Quad FETs very low interelectrode capacitance and on-resistance to achieve low insertion loss, crosstalk, and feedthrough performance. The threshold voltage for all switches is 2 V maximum, simplifying driver requirements for low level signal applications. For |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical .. spikes" or overstress .. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See 2N7116 Series |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical .. spikes" or overstress .. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See 2N7116 Series |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs an integrated Zener diode designed to protect the gate from electrical .. spikes" or overstress .. For additional design information please see performance curves DMCB, which are located in Section 7. SIMILAR PRODUCTS • Quad Array, See 2N7116 Series |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs a polysilicon gate. making Siliconix 2N7104 devices the perfect choice for high-performance military applications. For additional design information please see performance curves DMCB. which are located in Section 7. SIMILAR PRODUCTS • Quad Array. Se |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs a polysilicon gate. making Siliconix 2N7104 devices the perfect choice for high-performance military applications. For additional design information please see performance curves DMCB. which are located in Section 7. SIMILAR PRODUCTS • Quad Array. Se |
|
|
|
|
Siliconix |
N-Channel Lateral DMOS FETs a polysilicon gate. making Siliconix 2N7104 devices the perfect choice for high-performance military applications. For additional design information please see performance curves DMCB. which are located in Section 7. SIMILAR PRODUCTS • Quad Array. Se |
|
|
|
|
Siliconix |
N-Channel Enhancement Mode Transistors |
|
|
|
|
Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • ESD Protected: 2000 V APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS Pb-free Available RoHS* COMPLIANT • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • B |
|