No. | Partie # | Fabricant | Description | Fiche Technique |
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Silicon Laboratories |
BROADCAST MECHANICAL TUNING AM/FM/SW RADIO RECEIVER Worldwide FM band support (64 –109 MHz) Worldwide AM band support (504 –1750 kHz) SW band support (2.3 –28.5 MHz) No manual alignment necessary Mono audio output Selectable support AM/FM/SW regional bands Enhanced FM/SW band coverage A |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 G1 A/S2 A/S2 G2 1 2 3 4 SO-8 8 D1 7 D2/S1 6 D2/S1 5 D2/S1 Top View Ordering Information: Si4816 |
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Silicon Labs |
Universal ISM Band FSK Transceiver a completely integrated PLL for easy RF design, and its rapid settling time allows for fast frequency-hopping, bypassing multipath fading and interference to achieve robust wireless links. The PLL’s high resolution allows the usage of multiple channe |
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Silicon Laboratories |
BROADCAST AM/FM/SW/LW RADIO RECEIVER Worldwide FM band support Seven selectable AM channel filters (64 –108 MHz) AM/FM/SW/LW digital tuning Worldwide AM band support EN55020 compliant (520 –1710 kHz) No manual alignment necessary SW band support (Si4734/35) Progr |
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Vishay Siliconix |
N-Channel MOSFET D IDM IS IF IFM Symbol Limit 30 30 "20 10 8 50 2.3 4.0 50 2.5 1.6 2.0 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi t (t v 10 sec) )a Device MOSFET Schottky MOSFET Symbol Typi |
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Vishay Siliconix |
Dual P-Channel MOSFET exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the sam |
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Silicon Laboratories |
FM RADIO TRANSMITTER Integrated receive power measurement Worldwide FM band support (76 –108 MHz) Requires only two external components Frequency synthesizer with integrated VCO Digital stereo modulator Programmable pre-emphasis Analog/digital audio interfac |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Game Station - Load Switch S G D P-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Sourc |
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Vishay Siliconix |
P-Channel MOSFET D TrenchFETr Power MOSFETs SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4427DY-T1 Si4427DY-T1 –E3 (Lead (Pb)-free) S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs S |
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Vishay Siliconix |
MOSFET D TrenchFETr Power MOSFET D 100 % Rg Tested D UIS Tested APPLICATIONS D CCFL Inverter RoHS COMPLIANT S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4565DY –T1 –E3 (Lead (Pb) –free) D1 S2 G2 G1 S1 N-Channel MOSFET |
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Vishay Siliconix |
N-Channel MOSFET ID (A) 9 7.3 D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 1.4 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D Ordering Information: Si4812DY Si4812DY-T1 |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Advanced High Cell Density Process • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switches - Notebook PCs - Desktop PCs S G D P-Channel MOSFET ABSOLU |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.51 V |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested APPLICATIONS • DC/DC Converters • Synchronous Rectifiers D Available RoHS* COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, u |
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Vishay Siliconix |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Game Station - Load Switch S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Pa |
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Vishay Siliconix |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET® Power MOSFET • 100 % Rg Tested • Avalanche Tested S1 S2 S3 G4 SO-8 8D 7D 6D 5D APPLICATIONS • Primary Side Switch In: - Telecom Power Supplies - Distributed Power Ar |
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Vishay Siliconix |
P-Channel MOSFET Limit 55 Unit _C/W 2-1 Si4807DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) rDS1(on) |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free) Si4936ADY-T1-GE3 |
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Vishay Siliconix |
N-Channel MOSFET D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V Switching Frequency: 250 kHz to 1 MHz Integrated Schottky DESCRIPTIO |
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Vishay Siliconix |
Dual N-Channel 40-V (D-S) MOSFET ID (A)a 5.0 4.7 56 5.6 rDS(on) (W) 0.060 at VGS = 10 V 0.070 at VGS = 4.5 V Qg (Typ) D TrenchFETr Power MOSFET D 100 % Rg Tested APPLICATIONS D CCFL Inverter D1 D2 RoHS COMPLIANT www.DataSheet4U.com S1 G1 S2 G2 1 2 3 4 SO-8 8 7 6 5 Top View Or |
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