Silan SGT fiche technique

No.	Partie #	Fabricant	Description
1	SGT40N60NPFDPN	Silan	600V FIELD STOP IGBT  40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A  Low conduction loss  Fast switching  High input impedance NOMENCLATURE ORDERING INFORMATION Part No. SGT40N60NPFDPN Package TO-3P Marking 40N60NPFD Hazardous Substance Control Pb free ABSOLUTE MAXIMUM
2	SGTP5T60SD1D	Silan Semiconductors	600V FIELD STOP IGBT low conduction loss and switching loss, is applicable to UPS, SMPS, and PFC fields. FEATURES  5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 12 3 TO-220F-3L 1 3 TO-263-2L NOMENC
3	SGT60N60FD1	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
4	SGT60N60FD1PN	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
5	SGT20N60NPFDF	Silan Microelectronics	600V IGBT  20A, 600V, VCE(sat)(typ.) =1.8V@IC=20A  Low conduction loss  Fast switching  High input impedance  Low Cres/Cies NOMENCLATURE ORDERING INFORMATION Part No. SGT20N60NPFDF Package TO-220F-3L Marking 20N60NPFD Material Halogen free ABSOLUTE
6	SGT60N60FD1P7	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
7	SGT60N60FD1PS	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
8	SGT40T120FD3P7	Silan	1200V IGBT low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A  Low conduction loss 
9	SGTP5T60SD1S	Silan Semiconductors	600V FIELD STOP IGBT low conduction loss and switching loss, is applicable to UPS, SMPS, and PFC fields. FEATURES  5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 12 3 TO-220F-3L 1 3 TO-263-2L NOMENC
10	SGTP5T60SD1F	Silan Semiconductors	600V FIELD STOP IGBT low conduction loss and switching loss, is applicable to UPS, SMPS, and PFC fields. FEATURES  5A, 600V, VCE(sat)(typ.)=1.5V@IC=5A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 1 3 12 3 TO-220F-3L 1 3 TO-263-2L NOMENC
11	SGT60N60FD1PT	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan