Silan Microelectronics SGT fiche technique

No.	Partie #	Fabricant	Description
1	SGT60N60FD1	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
2	SGT60N60FD1PN	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
3	SGT20N60NPFDF	Silan Microelectronics	600V IGBT  20A, 600V, VCE(sat)(typ.) =1.8V@IC=20A  Low conduction loss  Fast switching  High input impedance  Low Cres/Cies NOMENCLATURE ORDERING INFORMATION Part No. SGT20N60NPFDF Package TO-220F-3L Marking 20N60NPFD Material Halogen free ABSOLUTE
4	SGT60N60FD1P7	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
5	SGT60N60FD1PS	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan
6	SGT60N60FD1PT	Silan Microelectronics	600V FIELD-STOP IGBT  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel plan