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Siemens Semiconductor |
SIPMO Power Transistor case www.DataSheet4U.com Symbol min. Values typ. max. 2.25 100 50 tbd - Unit RthJC RthJA RthJA - K/W Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Static Characteristics Drain- sou |
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Siemens Semiconductor Group |
SIPMO Power Transistor ce, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 2.25 100 50 tbd K/W Unit RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 6 |
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Siemens Semiconductor Group |
SIPMOS Power Transistor ature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C |
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Siemens Semiconductor Group |
SIPMOS Power Transistor ure Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 4.3 ≤ 50 ≤ 100 55 / |
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Siemens Semiconductor Group |
SIPMOS Power Transistor temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 2.7 ≤ 50 ≤ |
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Siemens Semiconductor Group |
SIPMOS Power Transistor resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤ 2.7 ≤ 50 ≤ 100 55 / 175 / 56 |
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Siemens Semiconductor Group |
SIPMOS Power Transistor ge temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤2 ≤ 50 ≤ |
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Siemens Semiconductor Group |
SIPMOS Power Transistor al resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 175 -55 ... + 175 °C ≤2 ≤ 50 ≤ 100 55 / 175 / 56 K |
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Siemens Semiconductor |
SIPMOS Power Transistor • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type SPD |
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Siemens Semiconductor |
SIPMOS Power Transistor • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.012 Ω • Avalanche rated www.DataSheet4U.com • Logic Level • dv/dt rated • 175°C operating |
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