| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) t ≤ 10 ms Total power dissipation BAS 70 TS ≤ 66 ˚C2) BAS 70-04 … TS ≤ 40 ˚C2) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction - ambient3) BAS 70 BAS 70-04 … Junction - soldering point BAS 70 BAS |
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Siemens Semiconductor Group |
Silicon Switching Diodes (High-speed/ high-voltage switch) IR – – – – 100 100 nA µA – – 1 1.25 120 200 250 – – – – – – V Values typ. max. Unit Forward voltage IF = 100 mA IF = 200 mA Reverse current VR = VR max VR = VR max; Tj = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recove |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Par |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) b 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 129 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown v |
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Siemens Semiconductor Group |
Smart Lowside Power Switch • Logic Level Input • Input protection (ESD) • Thermal shutdown (with restart) • Overload protection • Short circuit protection • Overvoltage protection • Current limitation Product Summary Continuous drain source voltage On-state resistance Current |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) . Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 50 1.2 Unit V(BR) IR VF 50 - V µA mV I (BR) = 5 µA Reverse current VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 1.2 |
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Siemens Semiconductor Group |
Silicon Photodiode for the visible spectral range q Especially suitable for applications from 350 nm to 820 nm q Adapted to human eye sensitivity (Vλ) q Hermetically sealed metal package (similar to TO-5) Applications q Exposure meter for daylight q For artificial light of high color temperature in |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) cified. Parameter Symbol min. Value typ. max. Unit DC characteristics Breakdown voltage IR = 5 µA Reverse leakage VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 0 V, f = 100 MHz Diode capacitance VR = 5 V, f = 1 MHz Forward resista |
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Siemens Semiconductor Group |
Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) lumina 15mm x 17.6mm x 0.7mm) Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BAT 17W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. ma |
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Siemens Semiconductor Group |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) meter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) IR 70 V µA I (BR) = 10 µA Reverse current VR = 50 V VR = 70 V Forward voltage - 375 705 880 0.1 10 mV 410 750 1000 VF 300 600 750 I F = 1 mA I F = 10 mA I |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V) T Values typ. – – 470 – – 1.4 480 500 – max. Unit nA 20 200 pF 520 34 – – – – 3 – Ω – ppm/K % 15 – – – – CT Semiconductor Group 2 BB 512 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) T |
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Siemens Semiconductor Group |
OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACRMS APPLICATIONS • Motor Drive Controls • IGBT-predrivers • AC/DC Power Inverters DESCRIPTION The IL485 is a photovoltatic generator (optically coupled) designed to |
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Siemens Semiconductor Group |
1.16 SQUARE 8X8 DOT MATRIX PROGRAMMABLE DISPLAY MODULE WITH ON BOARD DRIVERS/ BUILT-IN RAM AND SOFTWARE CONTROLLABLE FEATURES |
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor g RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown vo |
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Siemens Semiconductor Group |
Silicon Switching Diode (For high-speed switching) characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA CD trr – – – – 1.5 6 pF ns V(BR) VF – – – – IR – – – – – – 2.5 30 50 – – – – 715 855 1 1.25 mV mV V V µA Values typ. |
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Siemens Semiconductor Group |
HIGH-SPEED 2.5 kV TRIOS OPTOCOUPLER • Isolation Test Voltage: 2500 VACRMS • TTL Compatible • High Bit Rates: 1 Mbit/s • High Common-Mode Interference Immunity • Bandwidth 2 MHz • Open-Collector Output • External Base Wiring Possible • Field-Effect Stable by TRIOS* • Underwriters Lab Fi |
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Siemens Semiconductor Group |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
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Siemens Semiconductor Group |
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) 0 , f = 1 MHz Differential forward resistance IF = 5 mA Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 200 mA IF 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA ,TS TA TS Semiconductor Group 2 Mar- |
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Siemens Semiconductor Group |
Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) V I (BR) = 5 µA Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 0.09 0.3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance Ω τrr 1.2 1 75 |
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Siemens Semiconductor Group |
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package) 75 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diod |
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