| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode acteristics Drain-source breakdown voltage typ. 100 10 1 max. 12 13 50 1.5 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode meter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 9 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode stics Drain-source breakdown voltage typ. 14 0.9 max. 12 16 60 50 500 19 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 10 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode characteristics Drain-source breakdown voltage typ. 100 13 1 max. 12 13 50 800 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 12 8 8 - V I D = 650 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode characteristics Drain-source breakdown voltage typ. 12 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S |
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Siemens Semiconductor Group |
OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACRMS APPLICATIONS • Motor Drive Controls • IGBT-predrivers • AC/DC Power Inverters DESCRIPTION The IL485 is a photovoltatic generator (optically coupled) designed to |
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Siemens Semiconductor Group |
MOSFET q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 131 VDS 50 V ID 25 A RDS(on) 0.06 Ω Package TO-220AB Order |
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Siemens Semiconductor Group |
2.8KV TRIOS OPTOCOUPLERS |
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Siemens Semiconductor Group |
HIGH SPEED OPTOCOUPLER • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity: 15000 V/µ s at VCM=1500 V Guaranteed (SFH634 |
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Siemens Semiconductor Group |
PLASTIC FIBER OPTIC TRANSMITTER DIODE |
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Siemens Semiconductor Group |
N-Channel MOSFET |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode eter min. DC characteristics Drain-source breakdown voltage typ. 10 0.9 max. 12 16 60 50 500 - Unit V(BR)DS ±V (BR)G1SS ±V (BR)G2SS +I G1SS ±I G2SS 16 8 10 8 - V I D = 300 µA, -V G1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = |
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Siemens Semiconductor Group |
Silicon N Channel MOSFET Tetrode rce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off volt |
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Siemens Semiconductor Group |
Silicon N-Channel MOSFET Tetrode q q Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz Type BF 998 Marking MO Ordering Code (tape and reel) Q62702-F1129 Pin Configuration 1 2 3 4 S D G2 G1 Package1) SOT-143 Maximum R |
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Siemens Semiconductor Group |
Silicon PIN Photodiode with Daylight Filter q Especially suitable for applications of 880 nm q Kurze Schaltzeit (typ. 20 ns) q 5 mm-Plastikbauform im LED-Gehäuse q Auch gegurtet lieferbar 880 nm q Short-switching time (typ. 20 ns) q 5 mm LED plastic package q Also available on tape Anwendun |
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Siemens Semiconductor Group |
PIN PHOTODIODE |
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Siemens Semiconductor Group |
WITH IR FILTER PLASTIC FIBER OPTIC PHOTOTRANSISTOR DETECTOR |
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Siemens Semiconductor Group |
PLASTIC FIBER OPTIC TRANSMITTER DIODE |
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Siemens Semiconductor Group |
Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter q High pulse power and high radiant flux Φe q Very short switching times (10 ns) q Low forward voltage and power dissipation q Very high long-time stability q High reliability q Available on tape and reel q Suitable for surface mounting (SMT) q Same |
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