| No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units q High capacitance ratio q Type BB 833 Ordering Code (tape and reel) Q62702-B628 Pin Configuration 1 2 C A Marking white X Package SOD-323 Maximum Ratings Par |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚ |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
Programmable Single-/Dual-/Triple- Tone Gong q q q q q q q q q Supply voltage range 2.8 V to 18 V Few external components (no electrolytic capacitor) 1 tone, 2 tones, 3 tones programmable Loudness control Typical standby current 1 µA Constant current output stage (no oscillation) High-efficien |
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Siemens Semiconductor Group |
8-Bit CMOS Microcontroller USART Six interrupt sources, two priority levels Power saving modes Quick Pulse programming algorithm (C501-1E only) 2-Level program memory lock (C501-1E only) P-DIP-40, P-LCC-44, and P-MQFP-44 package Temperature ranges : SAB-C501 TA : 0 ˚C to 70 ˚ |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
ADVANCED PERIPHERAL INTERFACE CONTROLLER |
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Siemens Semiconductor Group |
16-Bit CMOS Single-Chip Microcontrollers single-chip CMOS microcontrollers. It combines high CPU performance (up to 10 million instructions per second) with high peripheral functionality and enhanced IO-capabilities. It also provides on-chip ROM, on-chip high-speed RAM and clock generation |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
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Siemens Semiconductor Group |
Silicon Tuning Diode (Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units) q Extended frequency range up to 2.8 Ghz ; special design for use in TV-sat indoor units High capacitance ratio q Type BB 835 Marking yellow X Ordering Code (tape and reel) Q62702-B802 Pin Configuration 1 C 2 A Package SOD-323 Maximum Ratings |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) rical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA C |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 846, BC 847, BC 849, BC 850 (NPN) Type BC 856 A BC 856 B BC 857 A BC 857 B B |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN) Type BC 856 AW BC 856 BW BC 857 AW BC |
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