| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. C B E E EHA07307 Transistor Schematic Diagram The common emitter configuration shows the following advantages: • Higher gain because |
|
|
|
|
Siemens Semiconductor Group |
Differential Magnetoresistive Sensor • Extremely high output voltage • 2 independently biased magnetic circuits • Robust housing • Signal amplitude independent of operating speed • Screw mounting possible Typical applications • Detection of speed • Detection of position • Detection of s |
|
|
|
|
Siemens Semiconductor Group |
HiRel Silicon PIN Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: Electrostatic discharge |
|
|
|
|
Siemens Semiconductor Group |
Differential Magnetoresistive Sensor • • • • • High output voltage High operating temperature Robust plastic housing Biasing magnet build in Signal amplitude is speed independent • Marking silver Typical applications • • • • • Detection of speed Detection of position Detection of sense |
|
|
|
|
Siemens Semiconductor Group |
HiRel Silicon PIN Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Transistors rwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor s Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = |
|
|
|
|
Siemens Semiconductor Group |
Differential Magnetoresistive Sensor • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable Typical applications • Detection of speed • Detection of position • Detection of se |
|
|
|
|
Siemens Semiconductor Group |
Differential Magnetoresistive Sensor • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable Typical applications • Detection of speed • Detection of position • Detection of se |
|
|
|
|
Siemens Semiconductor Group |
Differential Magnetoresistive Sensor • • • • High output voltage High operating temperature Robust plastic housing Signal amplitude is speed independent • Biasing magnet build in • Marking green Typical applications • Detection of speed • Detection of position • Detection of sense of ro |
|
|
|
|
Siemens Semiconductor Group |
Double Differential Magneto Resistor • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage • Compact construction • Available in strip form for automatic assembly Type FP 410 L (4×80) FM FP 410 L (4 |
|
|
|
|
Siemens Semiconductor Group |
HiRel Silicon PIN Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Matched diode - pair ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: |
|
|
|
|
Siemens Semiconductor Group |
HiRel Silicon PIN Diode ¥ HiRel Discrete and Microwave Semiconductor ¥ Current controlled RF resistor for RF attenuators and switches ¥ High reverse voltage ¥ Hermetically sealed microwave package ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5513/030 ESD: Electrostatic discharge |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current V |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor C Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VC |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor haracteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon RF Transistor DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V µA 100 nA 100 µA 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current V |
|
|
|
|
Siemens Semiconductor Group |
NPN Silicon Transistors rwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage BFP 22 IC = 1 mA BFP 25 Collector-base breakdown voltage BFP 22 IC = 100 µA BFP 25 Emitter-base breakdown voltage IE = 100 µA Collector-base cutoff current |
|