No. | Partie # | Fabricant | Description | Fiche Technique |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
NPN SILICON PLANAR DARLINGTON TRANSISTORS |
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Siemens Semiconductor Group |
NPN SILICON EPIBASE TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON EPIBASE TRANSISTORS |
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Siemens Semiconductor Group |
NPN SILICON PLANAR DARLINGTON TRANSISTORS |
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Siemens Semiconductor Group |
NPN Transistor |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
Silicon Switching Diode Array apacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2.5 15 pF ns V(BR) VF 550 850 IR – – – – 700 1100 100 nA 70 – – V mV Values typ. max. Un |
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Siemens Semiconductor Group |
1-A Quad-HBD (Quad-Half-Bridge Driver) • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode P-DSO-28-6 Low saturation voltage; typ.1.2 V total @ 25 °C; 0 |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) 19.5 – – – C T rS LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 |
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Siemens Semiconductor Group |
NPN SILICON DARLINGTON TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
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Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
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Siemens Semiconductor Group |
Silicon Switching Diode Array = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – |
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Siemens Semiconductor Group |
Silicon Switching Diode Array F = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – |
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Siemens Semiconductor Group |
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2 |
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Siemens Semiconductor Group |
PNP TRANSISTORS |
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Siemens Semiconductor Group |
PNP TRANSISTORS |
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