Siemens Semiconductor Group BD fiche technique

No.	Partie #	Fabricant	Description
1	BDX30	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTORS
2	BD876	Siemens Semiconductor Group	NPN SILICON PLANAR DARLINGTON TRANSISTORS
3	BD617	Siemens Semiconductor Group	NPN SILICON EPIBASE TRANSISTORS
4	BDX27	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTORS
5	BDX28	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTORS
6	BD877	Siemens Semiconductor Group	NPN SILICON PLANAR DARLINGTON TRANSISTORS
7	BDW25	Siemens Semiconductor Group	NPN Transistor
8	BDX29	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTORS
9	SMBD6100	Siemens Semiconductor Group	Silicon Switching Diode Array apacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – – – 2.5 15 pF ns V(BR) VF 550 850 IR – – – – 700 1100 100 nA 70 – – V mV Values typ. max. Un
10	TLE4208	Siemens Semiconductor Group	1-A Quad-HBD (Quad-Half-Bridge Driver) • • • • • • • • • • • • • • Driver for up to 3 motors Delivers up to 0.8 A continuous Optimized for DC motor management applications Very low current consumption in stand-by (Inhibit) mode P-DSO-28-6 Low saturation voltage; typ.1.2 V total @ 25 °C; 0
11	Q62702-B403	Siemens Semiconductor Group	Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) 19.5 – – – C T rS LS Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2
12	BD612	Siemens Semiconductor Group	PNP SILICON EPIBASE TRANSISTORS
13	BD863	Siemens Semiconductor Group	NPN SILICON DARLINGTON TRANSISTORS
14	BD287	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTORS
15	BD430	Siemens Semiconductor Group	PNP SILICON PLANAR TRANSISTOR
16	SMBD2836	Siemens Semiconductor Group	Silicon Switching Diode Array = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – –
17	SMBD2838	Siemens Semiconductor Group	Silicon Switching Diode Array F = 10 mA IF = 50 mA IF = 100 mA Reverse current VR = 30 V VR = 50 V AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr –
18	Q62702-B589	Siemens Semiconductor Group	Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 2
19	BD487	Siemens Semiconductor Group	PNP TRANSISTORS
20	BD488	Siemens Semiconductor Group	PNP TRANSISTORS