Sharp Microelectronics LHF fiche technique

No.	Partie #	Fabricant	Description
1	LHF00L14	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 10µ
2	LHF00L28	Sharp Microelectronics	Flash Memory 16M (1Mb x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 10µ
3	LHF00L31	Sharp Microelectronics	Flash Memory 16M (1Mb x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Pr
4	LHF00L12	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Pr
5	LHF00L13	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Pr
6	LHF00L29	Sharp Microelectronics	Flash Memory 16M (1Mb x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 10µ
7	LHF00L08	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 10µ
8	LHF00L09	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Program Algorithms • 3.0V Low-Power 10µ
9	LHF00L10	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Pr
10	LHF00L11	Sharp Microelectronics	Flash Memory 32M (2MB x 16) • Individual Block Lock and Block Lock-Down with Zero-Latency • All blocks are locked at power-up or device reset. • Absolute Protection with VPP≤VPPLK • Block Erase, Full Chip Erase, Word Program Lockout during Power Transitions Automated Erase/Pr